| PART |
Description |
Maker |
| LH28F800BGHETL85 LH28F800BGHBTL85 |
8 M-bit (512 kB x 16) SmartVoltage Flash Memories
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SHARP
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| E28F004SC-85 28F008SC 28F016SC G28F008SC-150 G28F0 |
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4/ 8/ AND 16 MBIT
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4 / 8 / AND 16 MBIT
8-MBIT SmartVoltage FlashFile Memory(8M位智能电压闪速存储器)
16-MBIT SmartVoltage FlashFile Memory(16M位智能电压闪速存储器)
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 512K X 8 FLASH 3.3V PROM, 85 ns, PDSO44
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 字节宽SmartVoltage FlashFile Memory系列486兆比
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 512K X 8 FLASH 3.3V PROM, 120 ns, PDSO44
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 512K X 8 FLASH 3.3V PROM, 100 ns, PDSO44
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 2M X 8 FLASH 3.3V PROM, 120 ns, PDSO44
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Intel Corporation
Intel Corp.
Intel, Corp.
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| LH28F160SGED-L10 |
16 M-bit (512 kB x 16 x 2-Bank) SmartVoltage Dual Work Flash Memory
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SHARP[Sharp Electrionic Components]
|
| AM27C256 AM27C256-120DC AM27C256-120DCB AM27C256-1 |
256 Kilobit (32 K x 8-Bit) CMOS EPRO
256 Kilobit (32 K x 8-Bit) CMOS EPROM
Quad 2-input positive-OR gates 14-PDIP 0 to 70
Quad 2-input positive-OR gates 14-SO 0 to 70
Universal shift / storage registers 20-PDIP 0 to 70
8-input positive-NAND gates 14-SO 0 to 70
Quad 2-input positive-OR gates 14-SOIC 0 to 70
Quad 2-input positive-OR gates 14-SSOP 0 to 70
8-Line To 3-Line Priority Encoder 16-SOIC 0 to 70 32K X 8 UVPROM, 70 ns, CDIP28
Hex Bus Drivers With 3-State Outputs 16-SOIC 0 to 70 32K X 8 UVPROM, 90 ns, CDIP28
256 Kilobit (32 K x 8-Bit) CMOS EPRO 32K X 8 UVPROM, 45 ns, CDIP28
256 Kilobit (32 K x 8-Bit) CMOS EPRO 32K X 8 OTPROM, 120 ns, PQCC32
256 Kilobit (32 K x 8-Bit) CMOS EPRO 32K X 8 OTPROM, 200 ns, PQCC32
256 Kilobit (32 K x 8-Bit) CMOS EPRO 32K X 8 OTPROM, 70 ns, PDIP28
256 Kilobit (32 K x 8-Bit) CMOS EPRO 32K X 8 OTPROM, 90 ns, PDIP28
Hex Bus Drivers With 3-State Outputs 16-PDIP 0 to 70 32K X 8 OTPROM, 90 ns, PQCC32
256 Kilobit (32 K x 8-Bit) CMOS EPRO 32K X 8 UVPROM, 120 ns, CDIP28
Quad 2-input positive-NOR buffers with open collector outputs 14-SOIC 0 to 70 32K X 8 UVPROM, 55 ns, CDIP28
256 Kilobit (32 K x 8-Bit) CMOS EPRO 32K X 8 UVPROM, 90 ns, CDIP28
256 Kilobit (32 K x 8-Bit) CMOS EPRO 32K X 8 UVPROM, 150 ns, CDIP28
256 Kilobit (32 K x 8-Bit) CMOS EPRO 32K X 8 UVPROM, 250 ns, CDIP28
256 Kilobit (32 K x 8-Bit) CMOS EPRO 32K X 8 OTPROM, 55 ns, PDIP28
256 Kilobit (32 K x 8-Bit) CMOS EPRO 32K X 8 OTPROM, 70 ns, PQCC32
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AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
Rochester Electronics, LLC
ADVANCED MICRO DEVICES INC
|
| AM29F200A-1 AM29F200AB-120DGC AM29F200AB-120DGC1 A |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash MemoryDie Revision 1
PCB COPPER CLAD 6X9 1/32 2-SIDE
DIN Audio Connector; Number of Contacts:5; Contact Termination:Solder; Mounting Type:Panel; Gender:Receptacle; Contact Plating:Silver; Series:C091A
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 256K X 8 FLASH 5V PROM, 90 ns, UUC42
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 2兆位256亩x 8-Bit/128亩x 16位）.0伏的CMOS只，扇区闪存模修
M39012 MIL RF CONNECTOR 2兆位56亩x 8-Bit/128亩x 16位）.0伏的CMOS只，扇区闪存模修
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 2兆位56亩x 8-Bit/128亩x 16位）.0伏的CMOS只，扇区闪存模修
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AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| IDT72235LB IDT72205LB IDT72225LB IDT72215LB IDT722 |
4K x 18 SyncFIFO, 5.0V
2K x 18 SyncFIFO, 5.0V
1K x 18 SyncFIFO, 5.0V
512 x 18 SyncFIFO, 5.0V
256 x 18 SyncFIFO, 5.0V
CMOS SyncFIFO?
Low Voltage 28-Bit Flat Panel Display Link Serializers; Package: TSSOP; No of Pins: 56; Container: Tape & Reel
TUBING, TFE 20GA
TUBE, THN, TEF, NAT, 24AWG
256 X 18 OTHER FIFO, 10 ns, PQFP64 PLASTIC, TQFP-64
256 X 18 OTHER FIFO, 15 ns, PQFP64 PLASTIC, TQFP-64
CMOS SyncFIFOO 256 x 18, 512 x 18, 1024 x 18, 2048 x 18 and 4096 x 18 256 X 18 OTHER FIFO, 15 ns, PQFP64
CMOS SyncFIFOO 256 x 18, 512 x 18, 1024 x 18, 2048 x 18 and 4096 x 18 512 X 18 OTHER FIFO, 15 ns, PQFP64
CMOS SyncFIFOO 256 x 18, 512 x 18, 1024 x 18, 2048 x 18 and 4096 x 18 2K X 18 OTHER FIFO, 15 ns, PQFP64
CMOS SyncFIFOO 256 x 18, 512 x 18, 1024 x 18, 2048 x 18 and 4096 x 18 1K X 18 OTHER FIFO, 15 ns, PQFP64
CMOS SyncFIFOO 256 x 18, 512 x 18, 1024 x 18, 2048 x 18 and 4096 x 18 4K X 18 OTHER FIFO, 15 ns, PQFP64
CMOS SyncFIFOO 256 x 18, 512 x 18, 1024 x 18, 2048 x 18 and 4096 x 18 的CMOS SyncFIFOO 256 × 1812 × 18024 × 18048 × 18096 × 18
CMOS SyncFIFOO 256 x 18, 512 x 18, 1024 x 18, 2048 x 18 and 4096 x 18 1K X 18 OTHER FIFO, 6.5 ns, PQCC68
CMOS SyncFIFOO 256 x 18, 512 x 18, 1024 x 18, 2048 x 18 and 4096 x 18 2K X 18 OTHER FIFO, 6.5 ns, PQFP64
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http://
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
Cypress Semiconductor, Corp.
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Technolog...
|
| A29L400ATM-70F A29L400ATM-90IF A29L400ATM-70UF A29 |
ER 3C 3#12 PIN PLUG
ER 48C 48#16 PIN RECP 12k × 8 256 × 16位的CMOS 3.0伏只，引导扇区闪
Replaced by PT78NR107,PT78ST107,PT78ST174 : 7.15Vout 1.5A Wide Input Positive Step-Down ISR 3-SIP MODULE -40 to 85 12k × 8 256 × 16位的CMOS 3.0伏只，引导扇区闪
512K X 8 Bit / 256K X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory 12k × 8 256 × 16位的CMOS 3.0伏只，引导扇区闪
Replaced by PT78ST105 : 5Vout 1.5A Wide Input Positive Step-Down ISR 3-SIP MODULE -40 to 85 12k × 8 256 × 16位的CMOS 3.0伏只，引导扇区闪
ER 48C 48#16 SKT RECP 12k × 8 256 × 16位的CMOS 3.0伏只，引导扇区闪
MS3106A16-10SW 12k × 8 256 × 16位的CMOS 3.0伏只，引导扇区闪
ER 8C 8#12 SKT RECP
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http://
Sanyo Denki Co., Ltd.
AMIC Technology, Corp.
AMIC Technology Corporation
|
| AM29F400BB-55FEB AM29F400BB-55FIB AM29F400BT-55FCB |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 5V PROM, 70 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
|
Advanced Micro Devices, Inc.
http://
|
| M410000027 M410000022 M41000001Z M41000001W |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位个M × 8 2米x 16位）.0伏的CMOS只，同时作业闪存兆位12亩x 8-Bit/256亩x 16位），静态存储器
|
Advanced Micro Devices, Inc.
|
| AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| AM29F200AT-55EC AM29F200AT-55EE AM29F200AT-55EI AM |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 128K X 16 FLASH 5V PROM, 120 ns, PDSO44
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 5V PROM, 90 ns, PDSO44
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 128K X 16 FLASH 5V PROM, 70 ns, PDSO44
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 128K X 16 FLASH 5V PROM, 150 ns, PDSO44
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 128K X 16 FLASH 5V PROM, 55 ns, PDSO48
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 2兆位56亩x 8-Bit/128亩x 16位）.0伏的CMOS只，引导扇区闪存
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 128K X 16 FLASH 5V PROM, 150 ns, PDSO48
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 5V PROM, 120 ns, PDSO48
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 2兆位256亩x 8-Bit/128亩x 16位）.0伏的CMOS只，引导扇区闪存
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 128K X 16 FLASH 5V PROM, 90 ns, PDSO48
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 5V PROM, 90 ns, PDSO48
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 128K X 16 FLASH 5V PROM, 70 ns, PDSO48
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Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
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